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dc.contributor.authorZhang, Yang
dc.date.accessioned2020-05-26T18:10:19Z
dc.date.available2020-05-26T18:10:19Z
dc.date.issued2020-01-15
dc.identifier.issn2643-1564
dc.identifier.urihttps://hdl.handle.net/1721.1/125455
dc.description.abstractWhen two lasers are applied to a noncentrosymmetric material, it can generate light at the difference of the incoming frequencies Δω, a phenomenon known as difference frequency generation (DFG), well characterized in semiconductors. In this work, we derive a general expression for DFG in metals, which we use to show that the DFG in chiral topological semimetals under circular polarized light is quantized in units of e^{3}/h^{2} and independent of material parameters, including the scattering time τ, when Δω≫τ^{−1}. In this regime, DFG provides a simpler alternative to measure a quantized response in metals compared to previous proposals based on single frequency experiments. Our general derivation unmasks, in addition, a free-carrier contribution to the circular DFG beyond the semiclassical one. This contribution can be written as a Fermi surface integral, features strong frequency dependence, and oscillates with a π/2 shift with respect to the quantized contribution. We make predictions for the circular DFG of chiral and nonchiral materials using generic effective models, and ab initio calculations for TaAs and RhSi. Our work provides a complete picture of the DFG in the length gauge approach, in the clean, noninteracting limit, and highlights a plausible experiment to measure topologically quantized photocurrents in metals.en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevResearch.2.012017en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Physical Societyen_US
dc.titleDifference frequency generation in topological semimetalsen_US
dc.typeArticleen_US
dc.identifier.citationJuan, F. de et al. “Difference frequency generation in topological semimetals.” Physical review research 2 (2020): 012017 © 2020 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.relation.journalPhysical review researchen_US
dc.identifier.mitlicensePUBLISHER_CC
dc.identifier.mitlicensePUBLISHER_CC
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-01-15T15:11:07Z
dc.language.rfc3066en
dspace.date.submission2020-01-15T15:11:07Z
mit.journal.volume2en_US
mit.metadata.statusComplete


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