dc.contributor.author | Guo, Alex | |
dc.contributor.author | del Alamo, Jesus A. | |
dc.date.accessioned | 2020-07-14T02:20:43Z | |
dc.date.available | 2020-07-14T02:20:43Z | |
dc.date.issued | 2017-05 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.issn | 1557-9646 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/126167 | |
dc.description.abstract | We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs under moderate positive and negative gate bias stress. We investigate the evolution of threshold voltage (V T ), maximum transconductance (g m,max ), and subthreshold swing (S). Our results show a universal continuous, symmetrical, and reversible VT shift and gm,max change as gate stress voltage (VGS,stress) increases from -5 to 5V at room temperature. The time evolution of V T is well described by a power law model. The voltage dependence, time dependence, and temperature dependence of our results suggest that for moderate gate bias stress, positive BTI and negative BTI are due to a single reversible mechanism. This is electron trapping/detrapping in preexisting oxide traps that form a defect band very close to the GaN/oxide interface and extend in energy beyond the conduction band edge of GaN and below the Fermi level at the channel surface at 0 V. | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/ted.2017.2686840 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Prof. del Alamo via Phoebe Ayers | en_US |
dc.title | Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Guo, Alex and Jesús A. del Alamo. "Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs." IEEE Transactions on Electron Devices 64, 5 (May 2017): 2142 - 2147 © 2017 IEEE | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.relation.journal | IEEE Transactions on Electron Devices | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.date.submission | 2020-07-09T19:24:13Z | |
mit.journal.volume | 64 | en_US |
mit.journal.issue | 5 | en_US |
mit.license | OPEN_ACCESS_POLICY | |
mit.metadata.status | Complete | |