Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
Author(s)El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A.S.; Walke, A.; Favia, P.; Douhard, B.; Lu, Wenjie; del Alamo, Jesus A; Collaert, N.; Merckling, C.; ... Show more Show less
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In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an “InSb-like” interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the “GaAs-like” one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.
DepartmentMassachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal of Crystal Growth
El Kazzi, S. et al. "Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode." Journal of Crystal Growth 484 (February 2018): 86-91 © 2018 Elsevier B.V.
Author's final manuscript