MIT Libraries homeMIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Formation of large-area MoS2 thin films by oxygen-catalyzed sulfurization of Mo thin films

Author(s)
Jo, Seong Soon; Li, Yifei; Singh, Akshay k; Kumar, Abinash; Frisone, Sam; Lebeau, James M; Jaramillo, Rafael; ... Show more Show less
Thumbnail
DownloadJo et al. - 2019 - Formation of large-area MoS2 thin films by oxygen-.pdf (2.113Mb)
Publisher Policy

Publisher Policy

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace oxygen gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide new insights into the growth of MoS2 by sulfurization and suggest that introducing an appropriate catalyst during chalcogenide phase formation could enable new processes for making homogeneous, large-area MoS2 films at low processing temperature on a variety of substrates.
Date issued
2019-12
URI
https://hdl.handle.net/1721.1/126225
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Journal of Vacuum Science & Technology A
Publisher
American Vacuum Society
Citation
Jo, Seong Soon et al. "Formation of large-area MoS2 thin films by oxygen-catalyzed sulfurization of Mo thin films." Journal of Vacuum Science & Technology A 38, 1 (January 2020): 013405.
Version: Final published version
ISSN
0734-2101
1520-8559

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries homeMIT Libraries logo

Find us on

Twitter Facebook Instagram YouTube RSS

MIT Libraries navigation

SearchHours & locationsBorrow & requestResearch supportAbout us
PrivacyPermissionsAccessibility
MIT
Massachusetts Institute of Technology
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.