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Optomechanical control of stacking patterns of h-BN bilayer

Author(s)
Xu, Haowei; Zhou, Jian; Li, Yifei; Jaramillo, Rafael; Li, Ju
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Abstract
Few-layer two-dimensional (2D) materials usually have different (meta)-stable stacking patterns, which have distinct electronic and optical properties. Inspired by optical tweezers, we show that a laser with selected frequency can modify the generalized stacking-fault energy landscape of bilayer hexagonal boron nitride (BBN), by coupling to the slip-dependent dielectric response. Consequently, BBN can be reversibly and barrier-freely switched between its stacking patterns in a controllable way. We simulate the dynamics of the stacking transition with a simplified equation of motion and demonstrate that it happens at picosecond timescale. When one layer of BBN has a nearly-free surface boundary condition, BBN can be locked in its metastable stacking modes for a long time. Such a fast, reversible and non-volatile transition makes BBN a potential media for data storage and optical phase mask. [Figure not available: see fulltext.].
Date issued
2019-08
URI
https://hdl.handle.net/1721.1/126259
Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Nano Research
Publisher
Springer Science and Business Media LLC
Citation
Xu, Haowei et al. "Optomechanical control of stacking patterns of h-BN bilayer." Nano Research 12, 10 (August 2019): 2634–2639 © 2019 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
Version: Author's final manuscript
ISSN
1998-0124
1998-0000

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