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dc.contributor.authorSiddiqui, Saima Afroz
dc.contributor.authorDutta, Sumit
dc.contributor.authorTang, Astera S.
dc.contributor.authorLiu, Luqiao
dc.contributor.authorRoss, Caroline A.
dc.contributor.authorBaldo, Marc A
dc.date.accessioned2020-09-30T14:30:22Z
dc.date.available2020-09-30T14:30:22Z
dc.date.issued2019-12
dc.identifier.issn1530-6984
dc.identifier.urihttps://hdl.handle.net/1721.1/127775
dc.description.abstractMagnetic domain walls are information tokens in both logic and memory devices and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award 1639921)en_US
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionof10.1021/ACS.NANOLETT.9B04200en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcearXiven_US
dc.titleMagnetic domain wall based synaptic and activation function generator for neuromorphic acceleratorsen_US
dc.typeArticleen_US
dc.identifier.citationSiddiqui, Saima A. et al. “Magnetic domain wall based synaptic and activation function generator for neuromorphic accelerators.” Nano Letters, 20, 2 (December 2019): 1033–1040 © 2019 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalNano Lettersen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2020-09-10T17:50:20Z
dspace.date.submission2020-09-10T17:50:22Z
mit.journal.volume20en_US
mit.journal.issue2en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusComplete


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