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dc.contributor.authorGeva, Nadav
dc.contributor.authorNienhaus, Lea
dc.contributor.authorWu, Mengfei
dc.contributor.authorBulovic, Vladimir
dc.contributor.authorBaldo, Marc A
dc.contributor.authorVan Voorhis, Troy
dc.contributor.authorBawendi, Moungi G
dc.date.accessioned2020-10-22T21:44:13Z
dc.date.available2020-10-22T21:44:13Z
dc.date.issued2019-05
dc.date.submitted2019-04
dc.identifier.issn1948-7185
dc.identifier.urihttps://hdl.handle.net/1721.1/128154
dc.description.abstractHigh internal quantum efficiency semiconductor nanocrystal (NC)-based photon upconversion devices are currently based on a single monolayer of active NCs. Devices are therefore limited in their external quantum efficiency based on the low number of photons absorbed. Increasing the number of photons absorbed is expected to increase the upconversion efficiency, yet experimentally increasing the number of layers does not appreciably increase the upconverted light output. We unravel this mystery by combining kinetic modeling and transient photoluminescence spectroscopy. The inherent energetic disorder stemming from the polydispersity of the NCs means that the kinetics are governed by a stochastic transfer matrix. By drawing the rates from a probabilistic distribution and constructing a reaction network with realistic connectivity, we are able to fit complex photoluminescence traces with a very simple model. We use this model to explain the thickness-dependent performance of the upconversion devices and can attribute the reduced efficiencies to the low excitonic diffusivity of the exciton within the NC layers and increased back transfer of the created singlets from the organic annihilator rubrene. We suggest some avenues for overcoming these limitations in future devices.en_US
dc.description.sponsorshipUS Department of Energy (Award DE-SC0001088)en_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acs.jpclett.9b01058en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceProf. Van Voorhisen_US
dc.titleA Heterogeneous Kinetics Model for Triplet Exciton Transfer in Solid-State Upconversionen_US
dc.typeArticleen_US
dc.identifier.citationGeva, Nadav et al. "A Heterogeneous Kinetics Model for Triplet Exciton Transfer in Solid-State Upconversion." Journal of Physical Chemistry Letters 10, 11 (May 2019): 3147–3152 © 2019 American Chemical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalJournal of Physical Chemistry Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2020-10-08T21:38:40Z
mit.journal.volume10en_US
mit.journal.issue11en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusComplete


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