Strain tuning of the emission axis of quantum emitters in an atomically thin semiconductor
Author(s)Chakraborty, Chitraleema; Moon, Hyowon; Englund, Dirk R.
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Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate-lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by ∼ 40◦ as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform.
DepartmentMassachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
The Optical Society
Chakraborty, Chitraleema et al. “Strain tuning of the emission axis of quantum emitters in an atomically thin semiconductor.” Optica, 7, 6 (June 2020): 2334-2536 © 2020 The Author(s)
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