A CMOS-integrated quantum sensor based on nitrogen–vacancy centres
Author(s)Kim, Donggyu; Ibrahim, Mohamed I.; Foy, Christopher C.; Trusheim, Matthew E; Han, Ruonan; Englund, Dirk R.; ... Show more Show less
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The nitrogen–vacancy (NV) centre in diamond can be used as a solid-state quantum sensor with applications in magnetometry, electrometry, thermometry and chemical sensing. However, to deliver practical applications, existing NV-based sensing techniques, which are based on bulky and discrete instruments for spin control and detection, must be replaced by more compact designs. Here we show that NV-based quantum sensing can be integrated with complementary metal–oxide–semiconductor (CMOS) technology to create a compact and scalable platform. Using standard CMOS technology, we integrate the essential components for NV control and measurement—microwave generator, optical filter and photodetector—in a 200 μm × 200 μm footprint. With this platform we demonstrate quantum magnetometry with a sensitivity of 32.1 μT Hz−1/2 and simultaneous thermometry.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering; Lincoln Laboratory; Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Springer Science and Business Media LLC
Kim, Donggyu et al. “A CMOS-integrated quantum sensor based on nitrogen–vacancy centres.” Nature Electronics, 2, 7 (July 2019): 284–289 © 2019 The Author(s)