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dc.contributor.authorJo, Seong Soon
dc.contributor.authorJaramillo, Rafael
dc.date.accessioned2021-02-16T18:48:57Z
dc.date.available2021-02-16T18:48:57Z
dc.date.issued2021-02-02
dc.date.submitted2020-11
dc.identifier.issn2059-8521
dc.identifier.urihttps://hdl.handle.net/1721.1/129771
dc.description.abstractTransition metal dichalcogenides have shown great potential for next-generation electronic and optoelectronic devices. However, native oxidation remains a major issue in achieving their long-term stability, especially for Zr-containing materials such as ZrS₂. Here, we develop a first principles-informed reactive forcefield for Zr/O/S to study oxidation dynamics of ZrS₂. Simulation results reveal anisotropic oxidation rates between (210) and (001) surfaces. The oxidation rate is highly dependent on the initial adsorption of oxygen molecules on the surface. Simulation results also provide reaction mechanism for native oxide formation with atomistic details.en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Grant DE-SC0014607)en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Multidisciplinary University Research Initiative (Grant N00014-17-1-2661)en_US
dc.publisherSpringer International Publishingen_US
dc.relation.isversionofhttps://doi.org/10.1557/s43580-021-00007-2en_US
dc.rightsCreative Commons Attributionen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceSpringer International Publishingen_US
dc.titleUnveiling oxidation mechanism of bulk ZrS2en_US
dc.typeArticleen_US
dc.identifier.citationYang, Liqiu et al. “Unveiling oxidation mechanism of bulk ZrS2.” MRS Advances 2021 (February 2021): doi.org/10.1557/s43580-021-00007-2. © 2021 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalMRS Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-02-07T05:00:13Z
dc.language.rfc3066en
dc.rights.holderThis is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply
dspace.embargo.termsN
dspace.date.submission2021-02-07T05:00:13Z
mit.journal.volume2021en_US
mit.licensePUBLISHER_CC
mit.metadata.statusComplete


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