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dc.contributor.authorYao, Xiahui
dc.contributor.authorKlyukin, Konstantin
dc.contributor.authorLu, Wenjie
dc.contributor.authorOnen, Murat
dc.contributor.authorRyu, Seungchan
dc.contributor.authorKim, Dongha
dc.contributor.authorEmond, Nicolas
dc.contributor.authordel Alamo, Jesús A.
dc.contributor.authorLi, Ju
dc.contributor.authorYildiz, Bilge
dc.date.accessioned2021-02-22T19:41:07Z
dc.date.available2021-02-22T19:41:07Z
dc.date.issued2020-06
dc.date.submitted2020-01
dc.identifier.issn2041-1723
dc.identifier.urihttps://hdl.handle.net/1721.1/129958
dc.description.abstractPhysical neural networks made of analog resistive switching processors are promising platforms for analog computing. State-of-the-art resistive switches rely on either conductive filament formation or phase change. These processes suffer from poor reproducibility or high energy consumption, respectively. Herein, we demonstrate the behavior of an alternative synapse design that relies on a deterministic charge-controlled mechanism, modulated electrochemically in solid-state. The device operates by shuffling the smallest cation, the proton, in a three-terminal configuration. It has a channel of active material, WO3. A solid proton reservoir layer, PdHx, also serves as the gate terminal. A proton conducting solid electrolyte separates the channel and the reservoir. By protonation/deprotonation, we modulate the electronic conductivity of the channel over seven orders of magnitude, obtaining a continuum of resistance states. Proton intercalation increases the electronic conductivity of WO3 by increasing both the carrier density and mobility. This switching mechanism offers low energy dissipation, good reversibility, and high symmetry in programming.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award DMR - 1419807)en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Science User Facility (Contract DE-SC0012704)en_US
dc.description.sponsorshipExtreme Science and Engineering Discovery Environment (XSEDE) (Grant TG-DMR190038)en_US
dc.language.isoen
dc.publisherSpringer Science and Business Media LLCen_US
dc.relation.isversionof10.1038/S41467-020-16866-6en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceNatureen_US
dc.titleProtonic solid-state electrochemical synapse for physical neural networksen_US
dc.typeArticleen_US
dc.identifier.citationYao, Xiahui et al. “Protonic solid-state electrochemical synapse for physical neural networks.” Nature Communications, 11, 1 (June 2020): 3431 © 2020 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.relation.journalNature Communicationsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-12-07T19:45:43Z
dspace.orderedauthorsYao, X; Klyukin, K; Lu, W; Onen, M; Ryu, S; Kim, D; Emond, N; Waluyo, I; Hunt, A; del Alamo, JA; Li, J; Yildiz, Ben_US
dspace.date.submission2020-12-07T19:45:50Z
mit.journal.volume11en_US
mit.journal.issue1en_US
mit.licensePUBLISHER_CC
mit.metadata.statusComplete


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