Show simple item record

dc.contributor.authorXu, Qian
dc.contributor.authorZhou, Jiawei
dc.contributor.authorLiu, Te-Huan
dc.contributor.authorChen, Gang
dc.date.accessioned2021-03-02T19:53:42Z
dc.date.available2021-03-02T19:53:42Z
dc.date.issued2019-07
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1721.1/130054
dc.description.abstractWhile it is well-known that electron-phonon scattering often determines the electron mobility, its impact on lattice thermal conductivity is less clear. Dominant phonon scattering mechanisms that determine the lattice thermal conductivity have been attributed to phonon-phonon and phonon-defect interactions. However, recent studies in silicon have shown that strong electron-phonon interaction can also lead to significant phonon scatterings at high carrier concentrations. Here, we use first-principles simulations to study thermal transport in SiGe alloys and show that the effect of electron-phonon interaction on thermal transport is even more significant than that in Si because mass disorder scattering leaves long mean free path phonons behind, which are more strongly scattered by electrons. At the carrier concentration of 1 × 10[superscript 20]cm[superscript −3], the room temperature lattice thermal conductivity of the Si[subscript 0.9]Ge[subscript 0.1] alloy including electron-phonon interaction is only 40% of the value without this interaction. The results show that thermal transport in alloys at a high doping level can be significantly impacted by the free carriers, providing important insights into heat conduction mechanisms in thermoelectric materials which are mostly based on heavily doped alloys.en_US
dc.description.sponsorshipDARPA (Grant HR0011-162-0041)en_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.5108836en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Gang Chenen_US
dc.titleEffect of electron-phonon interaction on lattice thermal conductivity of SiGe alloysen_US
dc.typeArticleen_US
dc.identifier.citationXu, Qian et al. "Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys." Applied Physics Letters 115, 2 (July 2019): 023903.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2020-09-17T20:25:01Z
mit.journal.volume115en_US
mit.journal.issue2en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusComplete


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record