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dc.contributor.authorTan, Scott H. (Scott Howard)
dc.contributor.authorLin, Peng
dc.contributor.authorYeon, Hanwool
dc.contributor.authorChoi, Shinhyun
dc.contributor.authorPark, Yongmo
dc.contributor.authorKim, Jeehwan
dc.date.accessioned2021-03-16T23:34:44Z
dc.date.available2021-03-16T23:34:44Z
dc.date.issued2018-12
dc.date.submitted2018-07
dc.identifier.issn2166-532X
dc.identifier.urihttps://hdl.handle.net/1721.1/130149
dc.description.abstractResistive random-Access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-Access memory, oxide random-Access memory, and conductive-bridging random-Access memory for artificial synapses. These devices could allow for dense and efficient storage of analog synapse connections between CMOS neuron circuits. We also discuss challenges and opportunities for analog synaptic devices toward the goal of realizing passive neuromorphic computing arrays. Finally, we focus on reducing spatial and temporal variations, which is critical to experimentally realize powerful and efficient neuromorphic computing systems.en_US
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttps://dx.doi.org/10.1063/1.5049137en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titlePerspective: Uniform switching of artificial synapses for large-scale neuromorphic arraysen_US
dc.typeArticleen_US
dc.identifier.citationTan, Scott H. et al., "Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays." APL Materials 6, 12 (December 2018): 120901 ©2018 Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalAPL Materialsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-07-23T19:51:34Z
dspace.date.submission2020-07-23T19:51:47Z
mit.journal.volume6en_US
mit.journal.issue12en_US
mit.licensePUBLISHER_CC
mit.metadata.statusComplete


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