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dc.contributor.authorYang, Liqiu
dc.contributor.authorTiwari, Subodh C
dc.contributor.authorJo, Seong S
dc.contributor.authorHong, Sungwook
dc.contributor.authorMishra, Ankit
dc.contributor.authorKrishnamoorthy, Aravind
dc.contributor.authorKalia, Rajiv K
dc.contributor.authorNakano, Aiichiro
dc.contributor.authorJaramillo, R.
dc.contributor.authorVashishta, Priya
dc.date.accessioned2021-09-20T17:41:32Z
dc.date.available2021-09-20T17:41:32Z
dc.date.issued2021-02-02
dc.identifier.urihttps://hdl.handle.net/1721.1/132028
dc.description.abstractAbstract Transition metal dichalcogenides have shown great potential for next-generation electronic and optoelectronic devices. However, native oxidation remains a major issue in achieving their long-term stability, especially for Zr-containing materials such as ZrS2. Here, we develop a first principles-informed reactive forcefield for Zr/O/S to study oxidation dynamics of ZrS2. Simulation results reveal anisotropic oxidation rates between (210) and (001) surfaces. The oxidation rate is highly dependent on the initial adsorption of oxygen molecules on the surface. Simulation results also provide reaction mechanism for native oxide formation with atomistic details. Graphic Abstracten_US
dc.publisherSpringer International Publishingen_US
dc.relation.isversionofhttps://doi.org/10.1557/s43580-021-00007-2en_US
dc.rightsCreative Commons Attributionen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceSpringer International Publishingen_US
dc.titleUnveiling oxidation mechanism of bulk ZrS2en_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.mitlicensePUBLISHER_CC
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-02-11T16:48:06Z
dc.language.rfc3066en
dc.rights.holderThis is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply
dspace.embargo.termsN
dspace.date.submission2021-02-11T16:48:05Z
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Needed


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