Show simple item record

dc.contributor.authorValencia-Acuna, Pavel
dc.contributor.authorZereshki, Peymon
dc.contributor.authorTavakoli, Mohammad Mahdi
dc.contributor.authorPark, Ji-Hoon
dc.contributor.authorKong, Jing
dc.contributor.authorZhao, Hui
dc.date.accessioned2022-07-20T20:12:49Z
dc.date.available2021-09-20T18:21:44Z
dc.date.available2022-07-20T20:12:49Z
dc.date.issued2020-07
dc.date.submitted2020-06
dc.identifier.urihttps://hdl.handle.net/1721.1/132300.2
dc.description.abstract© 2020 American Physical Society. We report three-pulse photodope-pump-probe measurements on photocarrier dynamics in semiconducting transition metal dichalcogenide monolayers of MoS2, WS2, MoSe2, and WSe2. The samples are fabricated by metal-organic chemical vapor deposition and mechanical exfoliation techniques and characterized by photoluminescence spectroscopy. In the time-resolved measurement, the samples are first photodoped by a prepulse, which injects background photocarriers of various densities. A pump pulse then injects photocarriers, whose dynamics is monitored by measuring a differential reflection of a time-delayed probe pulse. We found that the ultrafast decay component of the differential reflection signal, which has been widely reported before, shows minimal dependence on the background exciton density. This observation shows that a previously suggested carrier-trapping model cannot account for this component. The results thus further support an exciton-formation model that was previously proposed based on spectroscopic evidence.en_US
dc.language.isoen
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/PHYSREVB.102.035414en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleTransient absorption of transition metal dichalcogenide monolayers studied by a photodope-pump-probe techniqueen_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-01-08T18:06:48Z
dspace.orderedauthorsValencia-Acuna, P; Zereshki, P; Tavakoli, MM; Park, J-H; Kong, J; Zhao, Hen_US
dspace.date.submission2021-01-08T18:06:52Z
mit.journal.volume102en_US
mit.journal.issue3en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusPublication Information Neededen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

VersionItemDateSummary

*Selected version