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dc.contributor.authorLogan, Julie V
dc.contributor.authorFrantz, Elias B
dc.contributor.authorCasias, Lilian K
dc.contributor.authorShort, Michael P
dc.contributor.authorMorath, Christian P
dc.contributor.authorWebster, Preston T
dc.date.accessioned2021-10-27T19:51:33Z
dc.date.available2021-10-27T19:51:33Z
dc.date.issued2020
dc.identifier.urihttps://hdl.handle.net/1721.1/133217
dc.description.abstract<p>High energy proton irradiation produces long-lived p-type doping in GaN and Ga<sub>2</sub>O<sub>3</sub>.</p>en_US
dc.language.isoen
dc.publisherRoyal Society of Chemistry (RSC)en_US
dc.relation.isversionof10.1039/D0MA00017Een_US
dc.rightsCreative Commons Attribution 3.0 unported licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en_US
dc.sourceRoyal Society of Chemistry (RSC)en_US
dc.titlePotential for neutron and proton transmutation doping of GaN and Ga 2 O 3en_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineering
dc.relation.journalMaterials Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-08-12T12:41:10Z
dspace.orderedauthorsLogan, JV; Frantz, EB; Casias, LK; Short, MP; Morath, CP; Webster, PTen_US
dspace.date.submission2021-08-12T12:41:12Z
mit.journal.volume1en_US
mit.journal.issue1en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Needed


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