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dc.contributor.authorDing, Li
dc.contributor.authorUkhtary, Muhammad Shoufie
dc.contributor.authorChubarov, Mikhail
dc.contributor.authorChoudhury, Tanushree H
dc.contributor.authorZhang, Fu
dc.contributor.authorYang, Rui
dc.contributor.authorZhang, Ao
dc.contributor.authorFan, Jonathan A
dc.contributor.authorTerrones, Mauricio
dc.contributor.authorRedwing, Joan M
dc.contributor.authorYang, Teng
dc.contributor.authorLi, Mingda
dc.contributor.authorSaito, Riichiro
dc.contributor.authorHuang, Shengxi
dc.date.accessioned2022-06-30T19:50:26Z
dc.date.available2021-10-27T19:52:45Z
dc.date.available2022-06-30T19:50:26Z
dc.date.issued2018
dc.identifier.urihttps://hdl.handle.net/1721.1/133417.2
dc.description.abstract© 2018 IEEE. In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm-1. Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm-1. Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm-1 mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Waals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.en_US
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/TED.2018.2847230en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceother univ websiteen_US
dc.titleUnderstanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopyen_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.relation.journalIEEE Transactions on Electron Devicesen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-08-11T16:01:22Z
dspace.orderedauthorsDing, L; Ukhtary, MS; Chubarov, M; Choudhury, TH; Zhang, F; Yang, R; Zhang, A; Fan, JA; Terrones, M; Redwing, JM; Yang, T; Li, M; Saito, R; Huang, Sen_US
dspace.date.submission2021-08-11T16:01:25Z
mit.journal.volume65en_US
mit.journal.issue10en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusPublication Information Neededen_US


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