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dc.contributor.authorCalusine, G
dc.contributor.authorMelville, A
dc.contributor.authorWoods, W
dc.contributor.authorDas, R
dc.contributor.authorStull, C
dc.contributor.authorBolkhovsky, V
dc.contributor.authorBraje, D
dc.contributor.authorHover, D
dc.contributor.authorKim, DK
dc.contributor.authorMiloshi, X
dc.contributor.authorRosenberg, D
dc.contributor.authorSevi, A
dc.contributor.authorYoder, JL
dc.contributor.authorDauler, E
dc.contributor.authorOliver, WD
dc.date.accessioned2021-10-27T20:09:34Z
dc.date.available2021-10-27T20:09:34Z
dc.date.issued2018
dc.identifier.urihttps://hdl.handle.net/1721.1/134868
dc.description.abstract© 2018 Author(s). Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here, we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 μm in the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.isversionof10.1063/1.5006888
dc.rightsCreative Commons Attribution 4.0 International license
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceAmerican Institute of Physics (AIP)
dc.titleAnalysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonators
dc.typeArticle
dc.contributor.departmentLincoln Laboratory
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronics
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.relation.journalApplied Physics Letters
dc.eprint.versionFinal published version
dc.type.urihttp://purl.org/eprint/type/JournalArticle
eprint.statushttp://purl.org/eprint/status/PeerReviewed
dc.date.updated2021-04-06T12:45:23Z
dspace.orderedauthorsCalusine, G; Melville, A; Woods, W; Das, R; Stull, C; Bolkhovsky, V; Braje, D; Hover, D; Kim, DK; Miloshi, X; Rosenberg, D; Sevi, A; Yoder, JL; Dauler, E; Oliver, WD
dspace.date.submission2021-04-06T12:45:24Z
mit.journal.volume112
mit.journal.issue6
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Needed


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