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dc.contributor.authorKrieg, Linus
dc.contributor.authorZhang, Zhipeng
dc.contributor.authorSplith, Daniel
dc.contributor.authorvon Wenckstern, Holger
dc.contributor.authorGrundmann, Marius
dc.contributor.authorWang, Xiaoxue
dc.contributor.authorGleason, Karen K
dc.contributor.authorVoss, Tobias
dc.date.accessioned2022-06-07T12:56:13Z
dc.date.available2021-10-27T20:23:14Z
dc.date.available2022-06-07T12:56:13Z
dc.date.issued2020-04
dc.date.submitted2020-03
dc.identifier.issn2632-959X
dc.identifier.urihttps://hdl.handle.net/1721.1/135386.2
dc.language.isoen
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/2632-959x/ab82e6en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceIOP Publishingen_US
dc.titleControlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor depositionen_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineering
dc.relation.journalNano Expressen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-06-16T18:46:46Z
dspace.orderedauthorsKrieg, L; Zhang, Z; Splith, D; von Wenckstern, H; Grundmann, M; Wang, X; Gleason, KK; Voss, Ten_US
dspace.date.submission2021-06-16T18:46:47Z
mit.journal.volume1en_US
mit.journal.issue1en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work Neededen_US


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