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dc.contributor.authorNing, Shuai
dc.contributor.authorKumar, Abinash
dc.contributor.authorKlyukin, Konstantin
dc.contributor.authorCho, Eunsoo
dc.contributor.authorKim, Jong Heon
dc.contributor.authorSu, Tingyu
dc.contributor.authorKim, Hyun-Suk
dc.contributor.authorLeBeau, James M
dc.contributor.authorYildiz, Bilge
dc.contributor.authorRoss, Caroline A
dc.date.accessioned2021-10-27T20:30:57Z
dc.date.available2021-10-27T20:30:57Z
dc.date.issued2021-12
dc.identifier.urihttps://hdl.handle.net/1721.1/136129
dc.description.abstract<jats:title>Abstract</jats:title><jats:p>Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO<jats:sub>3</jats:sub>, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of Y<jats:sub>Fe</jats:sub> antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.</jats:p>en_US
dc.language.isoen
dc.publisherSpringer Science and Business Media LLCen_US
dc.relation.isversionof10.1038/s41467-021-24592-wen_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceNatureen_US
dc.titleAn antisite defect mechanism for room temperature ferroelectricity in orthoferritesen_US
dc.typeArticleen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineering
dc.relation.journalNature Communicationsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-08-10T18:48:27Z
dspace.orderedauthorsNing, S; Kumar, A; Klyukin, K; Cho, E; Kim, JH; Su, T; Kim, H-S; LeBeau, JM; Yildiz, B; Ross, CAen_US
dspace.date.submission2021-08-10T18:48:29Z
mit.journal.volume12en_US
mit.journal.issue1en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Needed


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