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dc.contributor.authorAlbo, Asaf
dc.contributor.authorFlores, Yuri V
dc.contributor.authorHu, Qing
dc.contributor.authorReno, John L
dc.date.accessioned2021-10-27T20:34:13Z
dc.date.available2021-10-27T20:34:13Z
dc.date.issued2019
dc.identifier.urihttps://hdl.handle.net/1721.1/136195
dc.description.abstract© 2019 Author(s). We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.isversionof10.1063/1.5089854
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.sourceOther repository
dc.titleSplit-well direct-phonon terahertz quantum cascade lasers
dc.typeArticle
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronics
dc.relation.journalApplied Physics Letters
dc.eprint.versionFinal published version
dc.type.urihttp://purl.org/eprint/type/JournalArticle
eprint.statushttp://purl.org/eprint/status/PeerReviewed
dc.date.updated2019-06-06T12:34:49Z
dspace.orderedauthorsAlbo, A; Flores, YV; Hu, Q; Reno, JL
dspace.date.submission2019-06-06T12:34:50Z
mit.journal.volume114
mit.journal.issue19
mit.metadata.statusAuthority Work and Publication Information Needed


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