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dc.contributor.authorSong, Qichen
dc.contributor.authorChen, Gang
dc.date.accessioned2021-12-15T18:39:31Z
dc.date.available2021-12-15T18:39:31Z
dc.date.issued2021-08-30
dc.identifier.urihttps://hdl.handle.net/1721.1/138493
dc.description.abstractDiffuse phonon scattering strongly affects the phonon transport through a disordered interface. The often-used diffuse mismatch model assumes that phonons lose memory of their origin after being scattered by the interface. Using mode-resolved atomistic Green’s function simulation, we demonstrate that diffuse phonon scattering by a single disordered interface cannot make a phonon lose its memory and thus the applicability of the diffusive mismatch model is limited. An analytical expression for diffuse scattering probability based on the continuum approximation is also derived and shown to work reasonably well at low frequenciesen_US
dc.language.isoen
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/physrevb.104.085310en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleEvaluation of the diffuse mismatch model for phonon scattering at disordered interfacesen_US
dc.typeArticleen_US
dc.identifier.citationSong, Qichen and Chen, Gang. 2021. "Evaluation of the diffuse mismatch model for phonon scattering at disordered interfaces." Physical Review B, 104 (8).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-12-15T18:36:53Z
dspace.orderedauthorsSong, Q; Chen, Gen_US
dspace.date.submission2021-12-15T18:36:54Z
mit.journal.volume104en_US
mit.journal.issue8en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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