Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN
Author(s)
Gong, Jiarui; Lu, Kuangye; Kim, Jisoo; Ng, TienKhee; Kim, Donghyeok; Zhou, Jie; Liu, Dong; Kim, Jeehwan; Ooi, Boon S; Ma, Zhenqiang; ... Show more Show less
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The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with ultrathin Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy. The study shows that the Al2O3 can help suppress the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend from 0.48 eV down to 0.12 eV as the number of Al2O3 deposition cycles increases from 0 to 20. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the introduction of ultrathin Al2O3 is the main reason for the surface band-bending modulation.
Date issued
2022-01-01Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Citation
Gong, Jiarui, Lu, Kuangye, Kim, Jisoo, Ng, TienKhee, Kim, Donghyeok et al. 2022. "Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN." Japanese Journal of Applied Physics, 61 (1).
Version: Original manuscript