Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
Author(s)
Sadeghi, Ida; Ye, Kevin; Xu, Michael; Li, Yifei; LeBeau, James M.; Jaramillo, Rafael; ... Show more Show less
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We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3
forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The
single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3
stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow
epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface
layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that
accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites.
This work sets the stage for developing chalcogenide perovskites as a family of semiconductor
alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin
films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The
methods demonstrated here also represent a revival of gas-source chalcogenide MBE.
Date issued
2021-08-16Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Advanced Functional Materials
Publisher
Wiley
Citation
Sadeghi, Ida, Ye, Kevin, Xu, Michael, Li, Yifei, LeBeau, James M. et al. 2021. "Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy." Advanced Functional Materials, 31 (45).
Version: Author's final manuscript
ISSN
1616-301X
1616-3028
Keywords
Electrochemistry, Condensed Matter Physics, Biomaterials, Electronic, Optical and Magnetic Materials