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Monolayer Hexagonal Boron Nitride: An Efficient Electron Blocking Layer in Organic Photovoltaics

Author(s)
Tavakoli, Mohammad Mahdi; Park, Ji‐Hoon; Mwaura, Jeremiah; Saravanapavanantham, Mayuran; Bulović, Vladimir; Kong, Jing; ... Show more Show less
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Abstract
In this study, monolayer hexagonal boron nitride (h-BN) grown via chemical vapor deposition (CVD) as an effective electron blocking layer (EBL) for the organic photovoltaics (OPVs) is proposed. Unexpectedly, it is found that h-BN can replace the commonly used hole transport layers (HTLs), i.e., molybdenum trioxide (MoO3) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) in an inverted device architecture. Here, a wet-transfer technique is employed and a single layer of h-BN on top of the PV2000:PC60BM blend is successfully placed. Analysis of the bandgap diagram shows that the monolayer h-BN makes smaller barrier for holes but significantly larger barrier for electrons. This makes the h-BN effective in blocking electrons while creating a possible path for the holes through tunneling to the electrode, due to the low energy barrier at the PV2000/h-BN interface. Using h-BN as an EBL, efficient inverted OPVs are achieved with an average solar-to-power conversion efficiency of 6.13%, which is comparable with that of reference devices based on MoO3 (7.3%) and PEDOT:PSS (7.6%) as HTLs. Interestingly, the devices with h-BN shows great light-soak stability. The study reveals that the monolayer h-BN grown by CVD could be an effective alternative EBL for the fabrication of efficient, lightweight, and stable OPVs.
Date issued
2021-04-22
URI
https://hdl.handle.net/1721.1/140279
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Advanced Functional Materials
Publisher
Wiley
Citation
Tavakoli, M. M., Park, J.-H., Mwaura, J., Saravanapavanantham, M., Bulović, V., Kong, J., Monolayer Hexagonal Boron Nitride: An Efficient Electron Blocking Layer in Organic Photovoltaics. Adv. Funct. Mater. 2021, 31, 2101238
Version: Author's final manuscript
ISSN
1616-301X
1616-3028

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