MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma

Author(s)
Kim, Ki Seok; Ji, You-Jin; Kim, Ki-Hyun; Kang, Ji-Eun; Ellingboe, Albert Rogers; Yeom, Geun Young; ... Show more Show less
Thumbnail
Downloadmicromachines-13-00173-v2.pdf (3.057Mb)
Publisher with Creative Commons License

Publisher with Creative Commons License

Creative Commons Attribution

Terms of use
Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/
Metadata
Show full item record
Abstract
Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 &deg;C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformity of 6.7% could be obtained due to the formation of high-ion-density (&gt;10<sup>11</sup> cm<sup>&minus;3</sup>) plasma with SiH<sub>4</sub> and a lack of standing waves by using small multi-split electrodes. The increase in the radio frequency (RF) power decreased the hydrogen content in the deposited silicon film and, at a high RF power of 2000 W, a-Si with a low hydrogen content of 3.78% could be deposited without the need for a dehydrogenation process. The crystallization of the a-Si by ultraviolet (UV) irradiation showed that the a-Si can be crystallized with a crystallinity of 0.8 and a UV energy of 80 J without dehydrogenation. High-resolution transmission electron microscopy showed that the a-Si deposited by the VHF plasma was a very small nanocrystalline-like a-Si and the crystalline size significantly grew with the UV irradiation. We believe that the VHF (162 MHz) multi-split plasma system can be used for a low-cost low-temperature polysilicon (LTPS) process.
Date issued
2022-01-24
URI
https://hdl.handle.net/1721.1/140290
Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
Micromachines
Publisher
MDPI AG
Citation
Kim, K.S.; Ji, Y.-J.; Kim, K.-H.; Kang, J.-E.; Ellingboe, A.R.; Yeom, G.Y. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma. Micromachines 13 (2): 173 (2022)
Version: Final published version
ISSN
2072-666X

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.