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dc.contributor.authorWang, Lili
dc.contributor.authorYoo, Jason J.
dc.contributor.authorLin, Ting‐An
dc.contributor.authorPerkinson, Collin F.
dc.contributor.authorLu, Yongli
dc.contributor.authorBaldo, Marc A.
dc.contributor.authorBawendi, Moungi G.
dc.date.accessioned2022-02-15T13:47:58Z
dc.date.available2022-02-15T13:47:58Z
dc.date.issued2021-05-28
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.urihttps://hdl.handle.net/1721.1/140348
dc.description.abstractPhoton upconversion via triplet–triplet annihilation (TTA) has promise for overcoming the Shockley–Queisser limit for single-junction solar cells by allowing the utilization of sub-bandgap photons. Recently, bulk perovskites have been employed as sensitizers in solid-state upconversion devices to circumvent poor exciton diffusion in previous nanocrystal (NC)-sensitized devices. However, an in-depth understanding of the underlying photophysics of perovskite-sensitized triplet generation is still lacking due to the difficulty of precisely controlling interfacial properties of fully solution-processed devices. In this study, interfacial properties of upconversion devices are adjusted by a mild surface solvent treatment, specifically altering perovskite surface properties without perturbing the bulk perovskite. Thermal evaporation of the annihilator precludes further solvent contamination. Counterintuitively, devices with more interfacial traps show brighter upconversion. Approximately an order of magnitude difference in upconversion brightness is observed across different interfacial solvent treatments. Sequential charge transfer and interfacial trap-assisted triplet sensitization are demonstrated by comparing upconversion performance, transient photoluminescence dynamics, and magnetic field dependence of the devices. Incomplete triplet conversion from transferred charges and consequent triplet-charge annihilation (TCA) are also observed. The observations highlight the importance of interfacial control and provide guidance for further design and optimization of upconversion devices using perovskites or other semiconductors as sensitizers.en_US
dc.languageen
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/adma.202100854en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceWileyen_US
dc.titleInterfacial Trap‐Assisted Triplet Generation in Lead Halide Perovskite Sensitized Solid‐State Upconversionen_US
dc.typeArticleen_US
dc.identifier.citationWang, L., Yoo, J. J., Lin, T.-A., Perkinson, C. F., Lu, Y., Baldo, M. A., Bawendi, M. G., Interfacial Trap-Assisted Triplet Generation in Lead Halide Perovskite Sensitized Solid-State Upconversion. Adv. Mater. 2021, 33, 2100854en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistry
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.relation.journalAdvanced Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2022-02-09T20:00:45Z
mit.journal.volume33en_US
mit.journal.issue27en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work Neededen_US


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