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dc.contributor.authorLee, Dongwook
dc.contributor.authorZhou, Jiawei
dc.contributor.authorChen, Gang
dc.contributor.authorShao‐Horn, Yang
dc.date.accessioned2022-02-25T16:32:40Z
dc.date.available2022-02-25T16:32:40Z
dc.date.issued2018-11-22
dc.identifier.issn2199-160X
dc.identifier.issn2199-160X
dc.identifier.urihttps://hdl.handle.net/1721.1/140757
dc.languageen
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/aelm.201800624en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceWileyen_US
dc.titleEnhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin‐Film Bilayered Heterostructuresen_US
dc.typeArticleen_US
dc.identifier.citationLee, Dongwook, Zhou, Jiawei, Chen, Gang and Shao‐Horn, Yang. 2018. "Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin‐Film Bilayered Heterostructures." Advanced Electronic Materials, 5 (3).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronics
dc.relation.journalAdvanced Electronic Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2022-02-09T21:18:47Z
mit.journal.volume5en_US
mit.journal.issue3en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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