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dc.contributor.authorMesserschmitt, Felix
dc.contributor.authorJansen, Maximilian
dc.contributor.authorRupp, Jennifer L. M.
dc.date.accessioned2022-02-25T16:35:48Z
dc.date.available2022-02-25T16:35:48Z
dc.date.issued2018-09-17
dc.identifier.issn2199-160X
dc.identifier.issn2199-160X
dc.identifier.urihttps://hdl.handle.net/1721.1/140761
dc.languageen
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/aelm.201800282en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceWileyen_US
dc.titleWhen Memristance Crosses the Path with Humidity Sensing—About the Importance of Protons and Its Opportunities in Valence Change Memristorsen_US
dc.typeArticleen_US
dc.identifier.citationMesserschmitt, Felix, Jansen, Maximilian and Rupp, Jennifer L. M. 2018. "When Memristance Crosses the Path with Humidity Sensing—About the Importance of Protons and Its Opportunities in Valence Change Memristors." Advanced Electronic Materials, 4 (12).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.relation.journalAdvanced Electronic Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2022-02-09T21:18:33Z
mit.journal.volume4en_US
mit.journal.issue12en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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