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dc.contributor.authorJang, Joonho
dc.contributor.authorYoo, Heun Mo
dc.contributor.authorPfeiffer, LN
dc.contributor.authorWest, KW
dc.contributor.authorBaldwin, KW
dc.contributor.authorAshoori, Raymond C
dc.date.accessioned2022-03-30T18:18:55Z
dc.date.available2022-03-30T18:18:55Z
dc.date.issued2021
dc.identifier.urihttps://hdl.handle.net/1721.1/141423
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionof10.1063/5.0049595en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titleStrong interlayer charge transfer due to exciton condensation in an electrically isolated GaAs quantum well bilayeren_US
dc.typeArticleen_US
dc.identifier.citationJang, Joonho, Yoo, Heun Mo, Pfeiffer, LN, West, KW, Baldwin, KW et al. 2021. "Strong interlayer charge transfer due to exciton condensation in an electrically isolated GaAs quantum well bilayer." Applied Physics Letters, 118 (20).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2022-03-30T18:07:27Z
dspace.orderedauthorsJang, J; Yoo, HM; Pfeiffer, LN; West, KW; Baldwin, KW; Ashoori, RCen_US
dspace.date.submission2022-03-30T18:07:28Z
mit.journal.volume118en_US
mit.journal.issue20en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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