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dc.contributor.authorTian, Xuezeng
dc.contributor.authorYan, Xingxu
dc.contributor.authorVarnavides, Georgios
dc.contributor.authorYuan, Yakun
dc.contributor.authorKim, Dennis S.
dc.contributor.authorCiccarino, Christopher J.
dc.contributor.authorAnikeeva, Polina
dc.contributor.authorLi, Ming-Yang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorNarang, Prineha
dc.contributor.authorPan, Xiaoqing
dc.contributor.authorMiao, Jianwei
dc.date.accessioned2022-05-31T20:35:31Z
dc.date.available2022-05-11T16:27:25Z
dc.date.available2022-05-31T20:35:31Z
dc.date.issued2021-09
dc.date.submitted2021-03
dc.identifier.issn2375-2548
dc.identifier.urihttps://hdl.handle.net/1721.1/142477.2
dc.description.abstractThe three-dimensional (3D) local atomic structures and crystal defects at the interfaces of heterostructures con-trol their electronic, magnetic, optical, catalytic, and topological quantum properties but have thus far eluded any direct experimental determination. Here, we use atomic electron tomography to determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, and atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first-principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will pave the way for correlating structure-property relationships of a wide range of heterostructure inter-faces at the single-atom level.en_US
dc.language.isoen
dc.publisherAmerican Association for the Advancement of Science (AAAS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1126/sciadv.abi6699en_US
dc.rightsAttribution-NonCommercial-ShareAlike 4.0en_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/en_US
dc.sourceScience Advancesen_US
dc.titleCapturing 3D atomic defects and phonon localization at the 2D heterostructure interfaceen_US
dc.typeArticleen_US
dc.identifier.citationTian, Xuezeng, Yan, Xingxu, Varnavides, Georgios, Yuan, Yakun, Kim, Dennis S et al. 2021. "Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface." Science Advances, 7 (38).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronics
dc.contributor.departmentMcGovern Institute for Brain Research at MIT
dc.contributor.departmentMassachusetts Institute of Technology. Department of Brain and Cognitive Sciences
dc.relation.journalScience Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2022-05-11T16:15:49Z
dspace.orderedauthorsTian, X; Yan, X; Varnavides, G; Yuan, Y; Kim, DS; Ciccarino, CJ; Anikeeva, P; Li, M-Y; Li, L-J; Narang, P; Pan, X; Miao, Jen_US
dspace.date.submission2022-05-11T16:15:51Z
mit.journal.volume7en_US
mit.journal.issue38en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work Neededen_US


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