Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
Author(s)
Okumura, Hironori; Watanabe, Yasuhiro; Shibata, Tomohiko; Yoshizawa, Kohei; Uedono, Akira; Tokunaga, Hiroki; Koseki, Shuuichi; Arimura, Tadanobu; Suihkonen, Sami; Palacios, Tomás; ... Show more Show less
DownloadPublished version (785.8Kb)
Publisher with Creative Commons License
Publisher with Creative Commons License
Creative Commons Attribution
Terms of use
Metadata
Show full item recordAbstract
<jats:title>Abstract</jats:title>
<jats:p>We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By annealing at 1600 °C, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300 °C, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.</jats:p>
Date issued
2022Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Citation
Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko, Yoshizawa, Kohei, Uedono, Akira et al. 2022. "Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing." Japanese Journal of Applied Physics, 61 (2).
Version: Final published version