| dc.contributor.author | Genoud, J. | |
| dc.contributor.author | Claveau, E. L. | |
| dc.contributor.author | Jawla, S. K. | |
| dc.contributor.author | Li, G. | |
| dc.contributor.author | Picard, J. F. | |
| dc.contributor.author | Shapiro, M. A. | |
| dc.contributor.author | Temkin, R. J. | |
| dc.date.accessioned | 2022-09-20T14:23:46Z | |
| dc.date.available | 2022-09-20T14:23:46Z | |
| dc.date.issued | 2022-07-25 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/145516 | |
| dc.description.abstract | <jats:p> A [Formula: see text] quasi-optical ring resonator consisting of an input coupler and three mirrors has been designed and tested. A low-loss silicon wafer in the ring provides output coupling of the stored power when irradiated by a pulse from a [Formula: see text] laser. The ring created [Formula: see text] output power pulses when excited by a [Formula: see text] continuously operating input source, achieving a power gain of 16. In a fully tuned ring, higher gain is achievable. If the ring was used with a pulsed input source having a pulse length of several times the fill time, the ring could be used as an efficient pulse compressor with similar high gain. The resonator has a wide range of applications, including, at low power, spectroscopy and, at high power, testing of accelerator structures and materials. </jats:p> | en_US |
| dc.publisher | AIP Publishing | en_US |
| dc.relation.isversionof | 10.1063/5.0098718 | en_US |
| dc.rights | Creative Commons Attribution 4.0 International license | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_US |
| dc.source | American Institute of Physics (AIP) | en_US |
| dc.title | Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Genoud, J., Claveau, E. L., Jawla, S. K., Li, G., Picard, J. F. et al. 2022. "Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch." 121 (4). | |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Plasma Science and Fusion Center | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.date.submission | 2022-09-20T14:18:31Z | |
| mit.journal.volume | 121 | en_US |
| mit.journal.issue | 4 | en_US |
| mit.license | PUBLISHER_CC | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |