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dc.contributor.authorSkorupskii, Grigorii
dc.contributor.authorChanteux, Géraldine
dc.contributor.authorLe, Khoa N
dc.contributor.authorStassen, Ivo
dc.contributor.authorHendon, Christopher H
dc.contributor.authorDincă, Mircea
dc.date.accessioned2023-02-10T15:23:12Z
dc.date.available2023-02-10T15:23:12Z
dc.date.issued2022
dc.identifier.urihttps://hdl.handle.net/1721.1/148009
dc.description.abstractMetal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state-in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2 /g, comparable to transition metal analogs.en_US
dc.language.isoen
dc.publisherWileyen_US
dc.relation.isversionof10.1111/NYAS.14906en_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceWileyen_US
dc.titleElectrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic frameworken_US
dc.typeArticleen_US
dc.identifier.citationSkorupskii, Grigorii, Chanteux, Géraldine, Le, Khoa N, Stassen, Ivo, Hendon, Christopher H et al. 2022. "Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework." Annals of the New York Academy of Sciences, 1518 (1).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.relation.journalAnnals of the New York Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2023-02-10T15:13:37Z
dspace.orderedauthorsSkorupskii, G; Chanteux, G; Le, KN; Stassen, I; Hendon, CH; Dincă, Men_US
dspace.date.submission2023-02-10T15:13:39Z
mit.journal.volume1518en_US
mit.journal.issue1en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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