GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Author(s)
Yuan, Mengyang; Xie, Qingyun; Fu, Kai; Hossain, Toiyob; Niroula, John; ... Show more
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Date issued
2022-09-05
URI
https://hdl.handle.net/1721.1/150481
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John et al. 2022. "GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform." IEEE Electron Device Letters, 43 (11).
Version: Author's final manuscript
ISSN
0741-3106
1558-0563
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
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