Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Author(s)
Yuan, Mengyang; Niroula, John; Xie, Qingyun; Rajput, Nitul S.; Fu, Kai; ... Show more
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Date issued
2023-07
URI
https://hdl.handle.net/1721.1/151793
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai et al. 2023. "Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation." IEEE Electron Device Letters, 44 (7).
Version: Author's final manuscript
ISSN
0741-3106
1558-0563
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
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