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dc.contributor.authorKwak, Kyoungwon
dc.contributor.authorYoon, Hyewon
dc.contributor.authorHong, Seongin
dc.contributor.authorKang, Byung Ha
dc.date.accessioned2025-01-10T21:04:40Z
dc.date.available2025-01-10T21:04:40Z
dc.date.issued2024-12-05
dc.identifier.urihttps://hdl.handle.net/1721.1/157954
dc.description.abstractAs the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical challenge, as transistors are fundamental components of electronics, playing a key role in overall performance. Among the wide range of candidates for flexible transistors, two-dimensional (2D) molybdenum disulfide (MoS2)-based transistors have emerged as potential solutions to address these challenges. Unlike other 2D materials, the 2D MoS2 offers numerous advantages, such as high carrier mobility, a tunable bandgap, superior mechanical strength, and exceptional chemical stability. This review emphasizes the novel techniques of the fabrication process, structure, and material to achieve flexible MoS2 transistor-based applications. Furthermore, the distinctive feature of this review is its focus on studies published in high-impact journals over the past decade, emphasizing their methods for developing MoS2 transistors into various applications. Finally, the review addresses technical challenges and provides an outlook for flexible and wearable MoS2 transistors.en_US
dc.publisherMultidisciplinary Digital Publishing Instituteen_US
dc.relation.isversionofhttp://dx.doi.org/10.3390/mi15121476en_US
dc.rightsCreative Commons Attributionen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceMultidisciplinary Digital Publishing Instituteen_US
dc.titleAdvances in 2D Molybdenum Disulfide Transistors for Flexible and Wearable Electronicsen_US
dc.typeArticleen_US
dc.identifier.citationKwak, K.; Yoon, H.; Hong, S.; Kang, B.H. Advances in 2D Molybdenum Disulfide Transistors for Flexible and Wearable Electronics. Micromachines 2024, 15, 1476.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.relation.journalMicromachinesen_US
dc.identifier.mitlicensePUBLISHER_CC
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2024-12-27T14:02:46Z
dspace.date.submission2024-12-27T14:02:46Z
mit.journal.volume15en_US
mit.journal.issue12en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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