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dc.contributor.authorCuriotto, Stefano
dc.contributor.authorChame, Anna
dc.contributor.authorMüller, Pierre
dc.contributor.authorThompson, Carl V
dc.contributor.authorPierre-Louis, Olivier
dc.date.accessioned2026-03-25T19:39:27Z
dc.date.available2026-03-25T19:39:27Z
dc.date.issued2022-03-03
dc.identifier.urihttps://hdl.handle.net/1721.1/165257
dc.description.abstractVacancies at interfaces between a film and a substrate can affect material properties and could play a role in solid state dewetting. Using kinetic Monte Carlo simulations, we show that interfacial mono-vacancies diffuse and coalesce to form vacancy clusters and voids. The film/substrate excess energy ES, which is related to the apparent contact angle, controls the mechanisms of coalescence. Depending on ES, voids emerging at the film surface form a hole that can be filled by the film or can lead to dewetting of the film from the substrate.en_US
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionof10.1063/5.0083139en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAIP Publishingen_US
dc.titleHole opening from growing interfacial voids: A possible mechanism of solid state dewettingen_US
dc.typeArticleen_US
dc.identifier.citationStefano Curiotto, Anna Chame, Pierre Müller, Carl V. Thompson, Olivier Pierre-Louis; Hole opening from growing interfacial voids: A possible mechanism of solid state dewetting. Appl. Phys. Lett. 28 February 2022; 120 (9): 091603.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2026-03-25T19:34:05Z
dspace.orderedauthorsCuriotto, S; Chame, A; Müller, P; Thompson, CV; Pierre-Louis, Oen_US
dspace.date.submission2026-03-25T19:34:06Z
mit.journal.volume120en_US
mit.journal.issue9en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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