Browsing MIT Open Access Articles by Subject "p-MOSFET"
Now showing items 1-1 of 1
-
Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
(Institute of Electrical and Electronics Engineers, 2009-10)Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and ...