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Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

Author(s)
Campos, Leonardo; Manfrinato, Vitor Riseti; Sanchez-Yamagishi, Javier D.; Kong, Jing; Jarillo-Herrero, Pablo
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Abstract
We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.
Date issued
2009-07
URI
http://hdl.handle.net/1721.1/50791
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
Nano Letters
Publisher
American Chemical Society
Citation
Campos, Leonardo C. et al. “Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene.” Nano Letters 9.7 (2009): 2600-2604.
Version: Author's final manuscript
ISSN
1530-6984

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