Impact ionization in InSb probed by terahertz pump—terahertz probe spectroscopy

Author(s)
Hoffmann, Matthias C.; Hebling, Janos; Hwang, Harold Young; Yeh, Ka-Lo; Nelson, Keith Adam
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Abstract
Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm[superscript 2], we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds 10[superscript 16] cm[superscript −3], corresponding to a change in carrier density ΔN/N of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.
Date issued
2009-04
URI
http://hdl.handle.net/1721.1/51883
Department
Massachusetts Institute of Technology. Department of Chemistry
Journal
Physical Review B
Publisher
American Physical Society
Citation
Hoffmann, Matthias C. et al. “Impact ionization in InSb probed by terahertz pump terahertz probe spectroscopy.” Physical Review B 79.16 (2009): 161201. © 2009 The American Physical Society
Version: Final published version
ISSN
1550-235X
1098-0121
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