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dc.contributor.authorSiber, A.
dc.contributor.authorRajter, Richard F.
dc.contributor.authorFrench, R. H.
dc.contributor.authorChing, W. Y.
dc.contributor.authorParsegian, V. A.
dc.contributor.authorPodgornik, R.
dc.date.accessioned2010-03-09T20:02:21Z
dc.date.available2010-03-09T20:02:21Z
dc.date.issued2009-10
dc.date.submitted2009-07
dc.identifier.issn1550-235X
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1721.1/52438
dc.description.abstractWe derive the complete form of the van der Waals dispersion interaction between two infinitely long anisotropic semiconducting/insulating thin cylinders at all separations. The derivation is based on the general theory of dispersion interactions between anisotropic media as formulated in Munday et al. [Phys. Rev. A 71, 042102 (2005)]. This formulation is then used to calculate the dispersion interactions between a pair of single-walled carbon nanotubes at all separations and all angles. Nonretarded and retarded forms of the interactions are developed separately. The possibility of repulsive dispersion interactions and nonmonotonic dispersion interactions is discussed within the framework of the formulation.en
dc.description.sponsorshipEunice Kennedy Shriver National Institute of Child Health and Human Developmenten
dc.description.sponsorshipNational Institutes of Health (Intramural Research Program)en
dc.language.isoen_US
dc.publisherAmerican Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.80.165414en
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en
dc.sourceAPSen
dc.titleDispersion interactions between optically anisotropic cylinders at all separations: Retardation effects for insulating and semiconducting single-wall carbonen
dc.typeArticleen
dc.identifier.citationSiber, A. et al. “Dispersion interactions between optically anisotropic cylinders at all separations: Retardation effects for insulating and semiconducting single-wall carbon nanotubes.” Physical Review B 80.16 (2009): 165414. © 2009 The American Physical Societyen
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverRajter, Richard F.
dc.contributor.mitauthorRajter, Richard F.
dc.relation.journalPhysical Review Ben
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/JournalArticleen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsŠiber, A.; Rajter, R.; French, R.; Ching, W.; Parsegian, V.; Podgornik, R.en
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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