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dc.contributor.authorMoeckly, B. H.
dc.contributor.authorAgassi, Y. D.
dc.contributor.authorOates, Daniel E.
dc.date.accessioned2010-03-11T19:09:20Z
dc.date.available2010-03-11T19:09:20Z
dc.date.issued2009-11
dc.date.submitted2009-09
dc.identifier.issn1550-235X
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1721.1/52517
dc.description.abstractWe present low-temperature low-power intermodulation-distortion (IMD) measurements of high-quality MgB[subscript 2] thin films that are inconsistent with presumed s-wave symmetry of the order parameter. The measurements were carried out in a stripline resonator at approximately 2 GHz between 1.8 K and T[subscript c]. The IMD arises from the nonlinear Meissner effect in which the penetration depth is dependent on the RF magnetic field. Specifically, the observed IMD vs temperature T for T≪T[subscript c]/2 varies as T[superscript −2], while for an s-wave gap symmetry in the clean limit, the low-temperature IMD decreases exponentially with decreasing temperature. We calculate the IMD from first principles for different order-parameter symmetries using a Green’s function approach and compare the results with the measured data. We propose that the observed upturn in the low-temperature IMD implies an admixture of an order parameter with nodal lines into the energy gaps of MgB[subscript 2]. Most likely, this admixture is prominent for the π gap. Within the constraints of the hexagonal crystal symmetry of MgB[subscript 2], the best fit with our IMD measurements is obtained with a gap Δ(ϕ,T)=Δ[subscript 0](T)sin(6ϕ), where ϕ is the azimuthal angle in the abˆ plane, and Δ[subscript 0](T) is the amplitude, weakly temperature dependent at low temperatures. This gap symmetry entails six nodal lines. We also present low-temperature penetration-depth measurements that are consistent with the proposed nodal gap symmetry. To relate our proposition with existing literature, we review other low-temperature probes of the order-parameter symmetry. The literature presents conflicting results, some of which are in direct support of the symmetry proposed here.en
dc.description.sponsorshipUnited States Department of the Navyen
dc.language.isoen_US
dc.publisherAmerican Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.80.174522en
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en
dc.sourceAPSen
dc.titleEvidence for non-s-wave symmetry of the pi gap in MgB[subscript 2] from intermodulation distortion measurementsen
dc.title.alternativeEvidence for non-s-wave symmetry of the π gap in MgB[subscript 2] from intermodulation distortion measurementsen
dc.typeArticleen
dc.identifier.citationAgassi, Y. D., D. E. Oates, and B. H. Moeckly. “Evidence for non- s -wave symmetry of the pi gap in MgB2 from intermodulation distortion measurements.” Physical Review B 80.17 (2009): 174522. © 2009 The American Physical Societyen
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.approverOates, Daniel E.
dc.contributor.mitauthorOates, Daniel E.
dc.relation.journalPhysical Review Ben
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/JournalArticleen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsAgassi, Y. D.; Oates, D. E.; Moeckly, B. H.en
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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