Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

Author(s)
Schimek, Oliver; Reich, Stephanie; Brewster, Megan Marie; Gradecak, Silvija
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Abstract
The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phonon-scattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at E[subscript g], allowing for the development and optimization of nanowire optoelectronic devices.
Date issued
2009-11
URI
http://hdl.handle.net/1721.1/52518
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Brewster, Megan et al. “Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy.” Physical Review B 80.20 (2009): 201314. © 2009 The American Physical Society
Version: Final published version
ISSN
1550-235X
1098-0121
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