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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Author(s)
Joh, Jungwoo; del Alamo, Jesus A.; Jimenez, Jose L.; Tserng, Hua-Quen; Chou, Tso-Min; Chowdhury, Uttiya; ... Show more Show less
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Abstract
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.
Date issued
2009-11
URI
http://hdl.handle.net/1721.1/52618
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Jungwoo Joh et al. “Measurement of Channel Temperature in GaN High-Electron Mobility Transistors.” Electron Devices, IEEE Transactions on 56.12 (2009): 2895-2901. © 2009 IEEE
Version: Final published version
ISSN
0018-9383

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