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dc.contributor.authorDeng, D. S.
dc.contributor.authorOrf, Nicholas D.
dc.contributor.authorAbouraddy, Ayman F.
dc.contributor.authorFink, Yoel
dc.date.accessioned2010-03-18T18:07:16Z
dc.date.available2010-03-18T18:07:16Z
dc.date.issued2009-08
dc.date.submitted2009-08
dc.identifier.issn0277-786X
dc.identifier.otherSPIE CID: 740204-3
dc.identifier.urihttp://hdl.handle.net/1721.1/52712
dc.description.abstractOne dimensional nanostructure such as nanowires is typically fabricated by the wafer-based approach. Here we report nanowires are fabricated by thermal drawing of fiber. A thin viscous semiconductor film internal to the fiber undergoes filamentation driven by a fluid instability while retaining longitudinal structural integrity. Arrays of centimeter-long crystalline nanowires by post-drawing crystallization process are electrically contacted and yield a two-order-of-magnitude change in conductivity between dark and illuminated states. These results hold promise for the nanowire-detector arrays that may be integrated with large-area electronics.en
dc.language.isoen_US
dc.publisherSociety of Photo-optical Instrumentation Engineersen
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.827379en
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en
dc.sourceSPIEen
dc.titleNovel fabrication and optoelectronic property of semiconductor filaments by optical-fiber thermal drawingen
dc.typeArticleen
dc.identifier.citationDeng, D. S. et al. “Novel fabrication and optoelectronic property of semiconductor filaments by optical-fiber thermal drawing.” Nanoengineering: Fabrication, Properties, Optics, and Devices VI. Ed. Elizabeth A. Dobisz & Louay A. Eldada. San Diego, CA, USA: SPIE, 2009. 740204-3. © 2009 SPIEen
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverFink, Yoel
dc.contributor.mitauthorDeng, D. S.
dc.contributor.mitauthorOrf, Nicholas D.
dc.contributor.mitauthorAbouraddy, Ayman F.
dc.contributor.mitauthorFink, Yoel
dc.relation.journalProceedings of SPIE--the International Society for Optical Engineeringen
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/JournalArticleen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsDeng, D. S.; Orf, N.; Abouraddy, A. F.; Fink, Y.en
dc.identifier.orcidhttps://orcid.org/0000-0001-9752-2283
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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