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dc.contributor.authorChung, SungWon
dc.contributor.authorGodoy, Philip Andrew
dc.contributor.authorBarton, Taylor W.
dc.contributor.authorHuang, Everest W.
dc.contributor.authorPerreault, David J.
dc.contributor.authorDawson, Joel L.
dc.date.accessioned2010-04-27T20:54:57Z
dc.date.available2010-04-27T20:54:57Z
dc.date.issued2009-06
dc.date.submitted2009-06
dc.identifier.isbn978-1-4244-3378-0
dc.identifier.isbn978-1-4244-3376-6
dc.identifier.urihttp://hdl.handle.net/1721.1/54242
dc.description.abstractWe describe a new outphasing transmitter architecture in which the supply voltage for each PA can switch among multiple levels. It is based on a new asymmetric multilevel outphasing (AMO) modulation technique which increases overall efficiency over a much wider output power range than the standard LINC system while maintaining high linearity. For demonstration, the overall transmitter is simulated in a 65 nm CMOS process with HSUPA and WLAN signals. The simulation results show an efficiency improvement from 17.7% to 40.7% for HSUPA at 25.3 dBm output power and from 11.3% to 35.5% for WLAN 802.11g at 22.8 dBm while still meeting system linearity requirements.en
dc.description.sponsorshipUnited States. Dept. of the Air Force (Contract FA827l-05-C-0002)en
dc.description.sponsorshipDeshpande Center for Technological Innovationen
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.relation.isversionofhttp://dx.doi.org/10.1109/RFIC.2009.5135530en
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en
dc.sourceIEEEen
dc.subjectwideband phase modulatoren
dc.subjectOutphasingen
dc.subjectDigital predistortionen
dc.subjectLINCen
dc.titleAsymmetric multilevel outphasing architecture for multi-standard transmittersen
dc.typeArticleen
dc.identifier.citationSungWon Chung et al. “Asymmetric multilevel outphasing architecture for multi-standard transmitters.” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE. 2009. 237-240. © 2009 Institute of Electrical and Electronics Engineers.en
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverDawson, Joel L.
dc.contributor.mitauthorChung, SungWon
dc.contributor.mitauthorGodoy, Philip Andrew
dc.contributor.mitauthorBarton, Taylor W.
dc.contributor.mitauthorHuang, Everest W.
dc.contributor.mitauthorPerreault, David J.
dc.contributor.mitauthorDawson, Joel L.
dc.relation.journalIEEE Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009.en
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsChung, SungWon; Godoy, Philip A.; Barton, Taylor W.; Huang, Everest W.; Perreault, David J.; Dawson, Joel L.en
dc.identifier.orcidhttps://orcid.org/0000-0002-0746-6191
dc.identifier.orcidhttps://orcid.org/0000-0002-3647-5089
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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