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dc.contributor.authorJohnson, Steven G.
dc.contributor.authorAvniel, Yehuda B.
dc.contributor.authorLee, Karen Ka Yan
dc.contributor.authorParzygnat, Arthur J.
dc.date.accessioned2010-04-29T16:50:56Z
dc.date.available2010-04-29T16:50:56Z
dc.date.issued2010-04
dc.date.submitted2010-03
dc.identifier.issn1550-235X
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1721.1/54686
dc.description.abstractWe prove, via an elementary variational method, one-dimensional (1D) and two-dimensional (2D) localization within the band gaps of a periodic Schrödinger operator for any mostly negative or mostly positive defect potential, V, whose depth is not too great compared to the size of the gap. In a similar way, we also prove sufficient conditions for 1D and 2D localization below the ground state of such an operator. Furthermore, we extend our results to 1D and 2D localization in d dimensions; for example, by a linear or planar defect in a three-dimensional crystal. For the case of D-fold degenerate band edges, we also give sufficient conditions for localization of up to D states.en
dc.description.sponsorshipCity University of New York. Macaulay Honors Collegeen
dc.language.isoen_US
dc.publisherAmerican Physical Societyen
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.155324en
dc.rightsAttribution-Noncommercial-Share Alike 3.0 Unporteden
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en
dc.sourceSteven G. Johnsonen
dc.titleSufficient conditions for two-dimensional localization by arbitrarily weak defects in periodic potentials with band gapsen
dc.typeArticleen
dc.identifier.citationParzygnat, Arthur et al. “Sufficient conditions for two-dimensional localization by arbitrarily weak defects in periodic potentials with band gaps.” Physical Review B 81.15 (2010): 155324. © 2010 The American Physical Societyen
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mathematicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverJohnson, Steven G.
dc.contributor.mitauthorJohnson, Steven G.
dc.contributor.mitauthorAvniel, Yehuda B.
dc.contributor.mitauthorLee, Karen Ka Yan
dc.contributor.mitauthorParzygnat, Arthur
dc.relation.journalPhysical Review Ben
dc.eprint.versionAuthor's final manuscript
dc.type.urihttp://purl.org/eprint/type/SubmittedJournalArticleen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsParzygnat, Arthur; Avniel, Yehuda; Johnson, Steven G.en
dc.identifier.orcidhttps://orcid.org/0000-0001-7327-4967
dc.identifier.orcidhttps://orcid.org/0000-0001-5994-0396
dspace.mitauthor.errortrue
mit.licenseOPEN_ACCESS_POLICYen
mit.metadata.statusComplete


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