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Graphene Frequency Multipliers

Author(s)
Wang, Han; Nezich, Daniel A.; Kong, Jing; Palacios, Tomas
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Abstract
In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies.
Date issued
2009-04
URI
http://hdl.handle.net/1721.1/54736
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Han Wang et al. “Graphene Frequency Multipliers.” Electron Device Letters, IEEE 30.5 (2009): 547-549. © 2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10624940
ISSN
0741-3106
Keywords
graphene field-effect transistors (G-FETs), full-wave rectifiers, frequency multipliers, frequency doublers

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