Graphene Frequency Multipliers
Author(s)Wang, Han; Nezich, Daniel A.; Kong, Jing; Palacios, Tomas
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In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
IEEE Electron Device Letters
Institute of Electrical and Electronics Engineers
Han Wang et al. “Graphene Frequency Multipliers.” Electron Device Letters, IEEE 30.5 (2009): 547-549. © 2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10624940
graphene field-effect transistors (G-FETs), full-wave rectifiers, frequency multipliers, frequency doublers