Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation
Author(s)Guo, Shiping; Tirado, Jose M.; Gao, Xiang; Saadat, Omair Irfan; Chung, Jae W.; Palacios, Tomas; ... Show more Show less
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
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We studied submicrometer (L[subscript G] = 0.15-0.25 Ã Â¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of I[subscript DS,max] = 1.5 A/mm and a record peak extrinsic transconductance of g[subscript m,ext] = 675 mS/mm. The thin Al[subscript 2]O[subscript 3] passivation improved the sheet resistance and the transconductance of these devices by 15% and 25%, respectively, at the same time that it effectively suppressed current collapse.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
IEEE Electron Device Letters
Institute of Electrical and Electronics Engineers
Chung, J.W. et al. “Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation.” Electron Device Letters, IEEE 30.9 (2009): 904-906. © 2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10841635
Al2O3 passivation, InAlN, gate recess, high transconductance, high-electron mobility transistor (HEMT)