MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation

Author(s)
Guo, Shiping; Tirado, Jose M.; Gao, Xiang; Saadat, Omair Irfan; Chung, Jae W.; Palacios, Tomas; ... Show more Show less
Thumbnail
DownloadChung-2009-Gate-Recessed InAlN_.pdf (403.5Kb)
OPEN_ACCESS_POLICY

Open Access Policy

Creative Commons Attribution-Noncommercial-Share Alike

Alternative title
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
Terms of use
Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use.
Metadata
Show full item record
Abstract
We studied submicrometer (L[subscript G] = 0.15-0.25 à ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of I[subscript DS,max] = 1.5 A/mm and a record peak extrinsic transconductance of g[subscript m,ext] = 675 mS/mm. The thin Al[subscript 2]O[subscript 3] passivation improved the sheet resistance and the transconductance of these devices by 15% and 25%, respectively, at the same time that it effectively suppressed current collapse.
Date issued
2009-08
URI
http://hdl.handle.net/1721.1/55351
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W. et al. “Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation.” Electron Device Letters, IEEE 30.9 (2009): 904-906. © 2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10841635
ISSN
0741-3106
Keywords
Al2O3 passivation, InAlN, gate recess, high transconductance, high-electron mobility transistor (HEMT)

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.